DocumentCode :
608271
Title :
Morphological analysis of GaN membranes obtained by micromachining of GaN/Si
Author :
Cismaru, A. ; Muller, A. ; Comanescu, F. ; Purica, Munizer ; Stefanescu, A. ; Dinescu, Adrian ; Konstantinidis, G. ; Stavrinidis, A.
Author_Institution :
IMT, Bucharest, Romania
fYear :
2013
fDate :
14-18 April 2013
Abstract :
The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane, further reducing of membrane thickness, to improve devices´ electrical performances, is possible without affecting their reliability.
Keywords :
III-V semiconductors; bulk acoustic wave devices; gallium compounds; membranes; micromachining; micromechanical resonators; photodetectors; reliability; wide band gap semiconductors; FBAR; GaN-Si; backside-illuminated UV photodetectors; membranes; micromachining; morphological analysis; reliability; Film bulk acoustic resonators; Gallium nitride; III-V semiconductor materials; Metallization; Resonant frequency; Silicon; Stress; FBAR; GaN membranes; Raman spectroscopy; WLI; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532090
Filename :
6532090
Link To Document :
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