Title :
The effect of hydrogen on program disturbance in sub-2ynm Nand flash
Author :
Jaewook Yang ; Wonhyo Cha ; Shinwon Seo ; Haesoon Oh ; Jeongseob Oh ; Hyunyoung Shim ; Sekyoung Choi ; Byung-Kook Kim ; Seokwon Cho ; Kiseog Kim ; Kun-Ok Ahn ; Gihyun Bae
Author_Institution :
Flash Dev. Div., SK Hynix Inc., Cheongju, South Korea
Abstract :
The Effect of hydrogen on program disturbance in sub-2ynm NAND flash is studied. It is supposed that boron atoms implanted for field stop are deactivated due to the formation of neutral boron-hydrogen pair. Boron deactivation results in the degradation of STI leakage and program disturbance. By adopting hydrogen reducing process, program disturbance of 2ynm NAND flash is successfully improved.
Keywords :
NAND circuits; boron; flash memories; hydrogen; isolation technology; semiconductor doping; B; H; NAND flash memory; STI leakage degradation; hydrogen effect; neutral boron-hydrogen pair; program disturbance; shallow trench isolation; Boron; Couplings; Flash memories; Hydrogen; Leakage currents; Logic gates; Boron deactivation; Hydrogen; STI leakage; program disturbance;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532092
