Title :
Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM
Author :
Deora, S. ; Bersuker, Gennadi ; Sung, M.G. ; Gilmer, D.C. ; Kirsch, P.D. ; Li, H.-F. ; Chong, Harold ; Gausepohl, S.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
This study discusses variability of the high and low resistance states (HRS and LRS, respectively) during the pulse cycling of the cross-bar 1T1R HfO2 based RRAM devices. Read current variation in LRS is found to follow a normal distribution while in the HRS, it is described by the log-normal dependency. It has been identified that the endurance degradation primarily occurs due increasing resistance in LRS caused by the shrinkage of the filament size.
Keywords :
hafnium compounds; log normal distribution; random-access storage; HfO2; RRAM; cross-bar; endurance degradation; filament size; high resistive states; log-normal dependency; low resistive states; pulse cycling; read current variation; resistance states; statistical assessment; Current distribution; Degradation; Gaussian distribution; Hafnium compounds; Resistance; Switches; high resistance state (HRS); low resistive states (LRS);
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532093
