DocumentCode :
608281
Title :
Electrical performances of SiO2-doped GeTe for phase-change memory applications
Author :
Navarro, G. ; Persico, A. ; Henaff, E. ; Aussenac, F. ; Noe, P. ; Jahan, C. ; Perniola, L. ; Sousa, V. ; Vianello, E. ; De Salvo, B.
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2013
fDate :
14-18 April 2013
Abstract :
We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.
Keywords :
germanium compounds; phase change memories; semiconductor doping; silicon compounds; GeTe; PCM technology; SiO2; SiO2-doped GeTe; crystallization dynamics; electrical efficiency; electrical performance; phase-change memory application; power reduction; thermal efficiency; threshold voltage; Crystallization; Phase change materials; Phase change memory; Resistance; Thermal stability; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532100
Filename :
6532100
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=608281
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