• DocumentCode
    608281
  • Title

    Electrical performances of SiO2-doped GeTe for phase-change memory applications

  • Author

    Navarro, G. ; Persico, A. ; Henaff, E. ; Aussenac, F. ; Noe, P. ; Jahan, C. ; Perniola, L. ; Sousa, V. ; Vianello, E. ; De Salvo, B.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.
  • Keywords
    germanium compounds; phase change memories; semiconductor doping; silicon compounds; GeTe; PCM technology; SiO2; SiO2-doped GeTe; crystallization dynamics; electrical efficiency; electrical performance; phase-change memory application; power reduction; thermal efficiency; threshold voltage; Crystallization; Phase change materials; Phase change memory; Resistance; Thermal stability; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532100
  • Filename
    6532100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=608281