Title :
Drain stress influence on read disturb defectivity
Author :
De Tomasi, M. ; Vaion, R.E. ; Cola, L. ; Zabberoni, P. ; Mervic, A.
Author_Institution :
STMicroelectron. S.r.l., Agrate Brianza, Italy
Abstract :
Introduction of Error Correction Code (ECC) on new flash memory has changed the dominant failure mode: single defective bits are corrected, intrinsic behavior affects reliability performance. In this paper we focused on the relationship between traps generated by Drain Stress during program operation and soft program induced by continuous reading. Particular focus has been given on new approach to improve reliability performance.
Keywords :
error correction codes; flash memories; integrated circuit reliability; ECC; continuous reading; dominant failure mode; drain stress influence; error correction code; flash memory; intrinsic behavior; program operation; read disturb defectivity; reliability performance improvement; soft program; Computer architecture; Error correction codes; Flash memories; Logic gates; Microprocessors; Reliability; Stress; Flash Memories; drain stress; gate stress; read disturb;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532103
