Title :
Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors
Author :
Jin, M. ; Tian, C.E. ; La Rosa, G. ; Uppal, S. ; McMahon, W. ; Kothari, H. ; Liu, Yanbing ; Cartier, E. ; Lai, W.L. ; Dasgupta, Avirup ; Polvino, S. ; Belyansky, M. ; Chen, Aaron ; Zhou, Xiaoxin ; Madan, A. ; Yao, Yiying ; Klymko, N. ; Narayanan, Vijaykri
Author_Institution :
Samsung Electron., Hopewell Junction, NY, USA
Abstract :
Bias Temperature Instability (BTI) degradation and recovery with different types of MOL capping layers are investigated in a 20nm Replacement Metal Gate (RMG) CMOS technology. It is found that less compressive RMG capping layers substantially improve reliability and device performance because of less hydrogen within the RMG capping material. The hydrogen content plays an important role in BTI degradation and recovery. Increased hydrogen enhances interface state generation during NBTI stress and suppresses h+ trap activation. This change in interface states has minimal impact on PBTI.
Keywords :
CMOS integrated circuits; MOSFET; hydrogen; integrated circuit reliability; semiconductor device reliability; stress analysis; BTI degradation; H; MOL capping layer; NBTI stress; PBTI; bias temperature instability; compressive RMG capping layer material; h+ trap activation suppression; high-replacement metal gate transistor; reliability; replacement metal gate CMOS technology; size 20 nm; Degradation; Films; Hydrogen; Interface states; Logic gates; MOSFET circuits; Stress; Bias temperature instability (BTI); High-κ Replacement Metal Gate Transistor (RMG); Hydrogen; Interface states; Middle-of-line (MOL); Oxide traps;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532106
