Modeling of radiation-induced single event transients in SOI FinFETS

Author

Artola, L. ; Hubert, Guillaume ; Schrimpf, R.D.

Author_Institution

DESP - Space Environ. Dept., ONERA - The French Aerosp. Lab., Toulouse, France

fYear

2013

fDate

14-18 April 2013

Abstract

This work presents the transient charge collection induced by energetic particles in sub-100 nm SOI FinFET technologies with the aim of estimating the SEU (Single Event Upset) and MBU (Multiple Event Upset) sensitivities. The estimates are performed with the dynamic charge transport and collection model of the MUSCA SEP3 platform and compared to TCAD simulations. The predictive platform works with a multi-scales modeling and physics-based Monte-Carlo approach and provides the device sensitivity but also investigates evolving technologies and emerging SEE mechanisms.

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; silicon-on-insulator; technology CAD (electronics); transient analysis; MBU; MUSCA SEP3 platform; SEE mechanisms; SEU; SOI FinFETS; TCAD simulations; device sensitivity; dynamic charge transport; energetic particles; multiple event upset sensitivity; multiscales modeling; physics-based Monte-Carlo approach; radiation-induced single event transients; single event upset; transient charge collection; FinFETs; Integrated circuit modeling; Logic gates; SRAM cells; Transient analysis; FinFET; Physical modeling; Silicon-on-Insulator (SOI); Single Event Transient (SET); Soft error; TCAD; Tri-Gate transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532108

Filename

6532108