Title :
Multi-region DCIV spectroscopy and impacts on the design of STI-based LDMOSFETs
Author :
Yandong He ; Ganggang Zhang ; Lin Han ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
A probing technique, multi-region DCIV spectroscopy, has been investigated systematically. This non-destructive method demonstrated the attractive capability on profiling the interface states overall in STI-based LDMOSFETs. The sensitivity on the interface state generation at channel and accumulation region was superior to the conventional Id-Vg method. Based on the device characterization and stress tests, the dependence of spectroscopic features on channel, accumulation and poly overlap length was investigated and verified. The optimum device design to suppress device degradation was proposed.
Keywords :
MOSFET; semiconductor device testing; spectra; Id-Vg method; STI-based LDMOSFET design; accumulation region; channel region; device degradation suppression; direct-current current-voltage; interface state generation sensitivity; interface state profiling; multiregion DCIV spectroscopy; nondestructive method; polyoverlap length; probing technique; stress testing; Current measurement; Degradation; Interface states; Logic gates; Spectroscopy; Stress; Substrates; STI-based LDMOSFET; multi-region DCIV spectroscopy; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532118
