Title :
A test structure and spectroscopic method for monitoring interface traps
Author :
Chao Wei ; Yandong He ; Gang Du ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
A new test structure and spectroscopic characterization method for monitoring interface traps in MOSFETs is proposed, which can be used to directly evaluate the interface traps on both n- and p-type Si/SiO2 interfaces through one-time direct current IV measurement. Based on the structure design and testing setup, a two-peak spectrum can be obtained. The properties of interface traps on both n- and p-type Si/SiO2 interfaces can be distinguished by the peak height and position. Some effects on the spectroscopic method by the test structure design parameters have been studied systematically. Its application in reliability research was demonstrated.
Keywords :
MOSFET; elemental semiconductors; interface states; silicon compounds; MOSFET; Si-SiO2; direct current IV measurement; interface traps; n-type Si/SiO2 interface; p-type Si/SiO2 interface; peak height; peak position; spectroscopic characterization method; test structure; two-peak spectrum; Integrated circuit reliability; Logic gates; MOSFET; Monitoring; Silicon; Substrates; DCIV; interface traps; test structure;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532121
