Title :
III–V quantum-dot laser growth on silicon and germanium
Author :
Lee, Albert ; Qi Jiang ; Ting Wang ; Mingchu Tang ; Seeds, A. ; Huiyun Liu
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
We present the studies of the development of room-temperature continuous-wave lasers near 1.3 μm on both silicon and germanium substrates with very low threshold current densities for silicon photonics.
Keywords :
current density; elemental semiconductors; germanium; micro-optics; quantum dot lasers; silicon; Ge; III-V quantum-dot laser growth; Si; continuous-wave lasers; low threshold current densities; photonics; room-temperature development; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Silicon; Substrates; 1300 nm laser diodes; III–V/Si integration; Quantum dots; Silicon photonics; molecular beam epitaxy;
Conference_Titel :
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0457-0
