DocumentCode
608683
Title
High speed waveguide-integrated Ge/Si avalanche photodetector
Author
Ning Duan ; Tsung-Yang Liow ; Lim, A.E. ; Liang Ding ; Guo Qiang Lo
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2013
fDate
17-21 March 2013
Firstpage
1
Lastpage
3
Abstract
We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.
Keywords
Ge-Si alloys; avalanche photodiodes; photodetectors; silicon-on-insulator; Ge-Si; SOI substrates; bandwidth 20 GHz; high speed waveguide-integrated avalanche photodetector; silicon photonic components; waveguide avalanche photodiodes; Avalanche photodiodes; Bandwidth; Electric fields; Optical waveguides; Sensitivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location
Anaheim, CA
Print_ISBN
978-1-4799-0457-0
Type
conf
Filename
6532823
Link To Document