DocumentCode
608967
Title
Fabrication of the first high-speed GaAs IQ electro-optic modulator arrays and applicability study for low-cost Tb/s direct-detection optical OFDM networks
Author
Stampoulidis, L. ; O´Keefe, M.F. ; Giacoumidis, E. ; Walker, R.G. ; Zhou, Yangzhong ; Cameron, N. ; Kehayas, Efstratios ; Tomkos, Ioannis ; Zimmermann, L.
Author_Institution
Athens Inno-Centre, Constelex Technol. Enablers Ltd., Marousi, Greece
fYear
2013
fDate
17-21 March 2013
Firstpage
1
Lastpage
3
Abstract
We present fabrication of the first GaAs electro-optic IQ modulator arrays for high capacity optical transport. Modulators demonstrate >35 GHz bandwidth with 3V Vp. The applicability study reveals suitability for 440Gb/s OOFDM over 1000 km.
Keywords
III-V semiconductors; OFDM modulation; electro-optical modulation; gallium arsenide; optical arrays; optical fibre fabrication; optical fibre networks; GaAs; OOFDM; bit rate 440 Gbit/s; distance 1000 km; high capacity optical transport; high-speed IQ electro-optic modulator arrays; low-cost Tb/s direct-detection optical OFDM networks; Electrooptic modulators; Gallium arsenide; High-speed optical techniques; OFDM; Optical device fabrication;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location
Anaheim, CA
Print_ISBN
978-1-4799-0457-0
Type
conf
Filename
6533107
Link To Document