DocumentCode
609075
Title
60 Gbit/s silicon modulators with enhanced electro-optical efficiency
Author
Xi Xiao ; Hao Xu ; Xianyao Li ; Zhiyong Li ; Tao Chu ; Jinzhong Yu ; Yude Yu
Author_Institution
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear
2013
fDate
17-21 March 2013
Firstpage
1
Lastpage
3
Abstract
We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
Keywords
Mach-Zehnder interferometers; electro-optical modulation; electrodes; elemental semiconductors; integrated optics; optical communication equipment; optical fibre communication; silicon; wavelength division multiplexing; PN junctions; Si; WDM modulations; bit rate 200 Gbit/s; bit rate 50 Gbit/s; bit rate 60 Gbit/s; electrodes; enhanced electro-optical efficiency; modulation efficiency; silicon MZI; silicon microring modulators; silicon modulators; Junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location
Anaheim, CA
Print_ISBN
978-1-4799-0457-0
Type
conf
Filename
6533215
Link To Document