• DocumentCode
    609636
  • Title

    UltraCMOS® technology for high-performance switch paths and tunable components

  • Author

    Novak, R.

  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Abstract form only given. UltraCMOS® is a CMOS-on-sapphire technology that has advanced through eight generations of process platforms. With its highly-insulating substrate, UltraCMOS technology enables Radio Frequency Integrated Circuits (RFICs) with performance equal to or better than that of GaAs-based devices, along with the integration and scaling of standard CMOS. UltraCMOS technology has captured the leading volume position in the RF front end of today´s LTE smartphones and is now ramping in tunable components. This presentation will review the unique advantages and breakthroughs that UltraCMOS technology has enabled.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; Long Term Evolution; gallium arsenide; radiofrequency integrated circuits; sapphire; smart phones; CMOS-on-sapphire technology; GaAs; LTE smartphones; RF front end; RFIC; high-performance switch paths; radiofrequency integrated circuits; ultraCMOS® technology; ultraCMOS® technology; Abstracts; Performance evaluation; Radiofrequency integrated circuits; Standards; Substrates; Switches; Trademarks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-4435-7
  • Type

    conf

  • DOI
    10.1109/VLDI-DAT.2013.6533812
  • Filename
    6533812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=609636