Title :
UltraCMOS® technology for high-performance switch paths and tunable components
Abstract :
Abstract form only given. UltraCMOS® is a CMOS-on-sapphire technology that has advanced through eight generations of process platforms. With its highly-insulating substrate, UltraCMOS technology enables Radio Frequency Integrated Circuits (RFICs) with performance equal to or better than that of GaAs-based devices, along with the integration and scaling of standard CMOS. UltraCMOS technology has captured the leading volume position in the RF front end of today´s LTE smartphones and is now ramping in tunable components. This presentation will review the unique advantages and breakthroughs that UltraCMOS technology has enabled.
Keywords :
CMOS integrated circuits; III-V semiconductors; Long Term Evolution; gallium arsenide; radiofrequency integrated circuits; sapphire; smart phones; CMOS-on-sapphire technology; GaAs; LTE smartphones; RF front end; RFIC; high-performance switch paths; radiofrequency integrated circuits; ultraCMOS® technology; ultraCMOS® technology; Abstracts; Performance evaluation; Radiofrequency integrated circuits; Standards; Substrates; Switches; Trademarks;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-4435-7
DOI :
10.1109/VLDI-DAT.2013.6533812
