DocumentCode :
609653
Title :
Microscopic degradation models for advanced technology
Author :
Bersuker, Gennadi
Author_Institution :
SEMATECH, Albany, NY, USA
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
1
Abstract :
New failure mechanisms can be expected to emerge with introduction of new materials and device structures. Reliability assessment is further complicated by increasing device-to-device variability associated with continuous scaling that demands ever increasing sample sizes for statistical evaluations. To mitigate this trend, the traditional statistical reliability analysis can be complemented by the microscopic degradation models, which are based on the atomic-level material properties and explicitly consider defect generation caused by the carrier-dielectric interaction.
Keywords :
failure analysis; reliability theory; statistical analysis; atomic-level material property; carrier-dielectric interaction; defect generation; device structures; device-to-device variability; failure mechanisms; microscopic degradation models; reliability assessment; statistical evaluations; statistical reliability analysis; Degradation; Dielectrics; Microscopy; Reliability; Stress; Temperature distribution; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-4435-7
Type :
conf
DOI :
10.1109/VLDI-DAT.2013.6533829
Filename :
6533829
Link To Document :
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