A 4.0/7.5-GHz dual-band LC VCO in 0.18-μm SiGe BiCMOS technology

Author

Jain, Sonal ; Sheng-Lyang Jang ; Miin-Horng Juang

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

4

Abstract

This letter presents a low phase noise BiCMOS dual-band voltage-controlled oscillator (VCO). The designed circuit consists of a dual-resonance LC resonator and a Colpitts negative resistance cell. The dual-resonance LC resonator comprises a series-tuned LC resonator and a parallel resonant resonator. The proposed VCO has been implemented with the TSMC 0.18 μm SiGe 3P6M BiCMOS process. The VCO can generate differential signals in the frequency range of 3.91~4.17 GHz and 7.24~7.80GHz with core power consumption is 6.30mW and 5.88mW at the dc bias of 1.4 V respectively. At 4.0 GHz and 7.74 GHz, phase noise at 1MHz offset is -121.13dBc/Hz and -115.87dBc/GHz respectively. The die area of the dual-band VCO is 0.485×0.800 mm².

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; microwave oscillators; microwave resonators; power consumption; voltage-controlled oscillators; 3P6M BiCMOS process; Colpitts negative resistance cell; SiGe; core power consumption; dual-band LC VCO; dual-resonance LC resonator; frequency 3.91 GHz to 7.5 GHz; low phase noise BiCMOS dual-band voltage-controlled oscillator; parallel resonant resonator; power 5.88 mW; power 6.30 mW; series-tuned LC resonator; size 0.18 mum; voltage 1.4 V; BiCMOS integrated circuits; CMOS integrated circuits; Dual band; Phase noise; Tuning; Varactors; Voltage-controlled oscillators; BiCMOS; dual-band voltage-controlled oscillator; parallel resonant resonator; series-tuned LC resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-4435-7

Type

conf

DOI

10.1109/VLDI-DAT.2013.6533836

Filename

6533836