• DocumentCode
    609665
  • Title

    Time-domain analog-to-digital converters with domino delay lines

  • Author

    Chang-Ming Lai ; Yi-Chung Chen ; Po-Chiun Huang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A time-domain analog-to-digital (ADC) based on a domino delay line for high-speed applications is presented. The structure is mainly built on digital blocks and is compatible with digital nanometer processes. The domino delay line consists of enhanced delay units and parallel reset for reducing the propagation delay. Dual-mode operation including a Nyquist mode and a sigma-delta modulation (SDM) mode can be provided by different processing of residue phases. Furthermore, a digital calibration technique is also proposed to compensate the inherently nonlinear behaviors. The proposed structure has been designed and implemented in a 0.18-μm standard CMOS process with active area of 0.01 mm2. Same design is also ported and simulated in 90-nm, and 55-nm CMOS process, respectively. The figure-of-merit (FOM) of these ADCs can achieve 1.65, 0.28, and 0.07 pJ/Conversion-Step.
  • Keywords
    CMOS integrated circuits; calibration; sigma-delta modulation; ADC; CMOS; Nyquist mode; SDM mode; digital block; digital calibration technique; digital nanometer process; domino delay lines; dual-mode operation; high-speed application; nonlinear behavior compensation; parallel reset; propagation delay reduction; residue phase processing; sigma-delta modulation mode; size 55 nm; size 90 nm; time-domain analog-to-digital converter; CMOS process; Calibration; Delay lines; Delays; Propagation delay; Solid state circuits; Time-domain analysis; Analog-to-digital converters; domino delay line; time-domain analog-to-digital converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-4435-7
  • Type

    conf

  • DOI
    10.1109/VLDI-DAT.2013.6533841
  • Filename
    6533841