DocumentCode
609681
Title
A 180 MHz direct access read 4.6Mb embedded flash in 90nm technology operating under wide range power supply from 2.1V to 3.6V
Author
Hung-Chang Yu ; Ku-Feng Lin ; Kai-Chun Lin ; Yu-Der Chih ; Natarajan, Sriraam
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2013
fDate
22-24 April 2013
Firstpage
1
Lastpage
4
Abstract
To achieve the 180MHz read speed for 4.6 Mb Flash memory, we propose an adaptive WL boost driver (AWBD) and a high-speed sensing-assist (HSSA) scheme to fast activate the word-line and bitline. AWBD reduces 45% word-line rising time. HSSA establishes bitline bias within 500ps under heavy bit-line load. This work implemented in 90nm process and the access time 5.2ns is achieved.
Keywords
embedded systems; flash memories; AWBD; HSSA scheme; adaptive WL boost driver; bit-line; direct access read embedded flash memory; frequency 180 MHz; high-speed sensing-assist scheme; size 90 nm; time 500 ps; voltage 2.1 V to 3.6 V; wide range power supply; Automotive engineering; Flash memories; Power supplies; Sensors; Time measurement; Vehicles; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4673-4435-7
Type
conf
DOI
10.1109/VLDI-DAT.2013.6533858
Filename
6533858
Link To Document