• DocumentCode
    609692
  • Title

    A low-power delay-recycled all-digital duty-cycle corrector with unbalanced process variations tolerance

  • Author

    Ching-Che Chung ; Chang-Jun Li

  • Author_Institution
    Dept. of Comput. Sci. & Inf. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, a low-power delay-recycled all-digital duty-cycle corrector (ADDCC) is presented. The proposed ADDCC corrects the duty-cycle of the distorted clock to 50% under process, voltage, and temperature (PVT) variations. Besides, the delay-recycled architecture reduces the required length of the delay line to 1/2 of the input clock period. The proposed ADDCC architecture saves both the chip area and the power consumption. In addition, the proposed ADDCC can work properly at unbalanced process corners (i.e. SF and FS). The proposed design is implemented in a standard performance 90nm CMOS process, and the active area is 70 μm × 70 μm. The simulation results show that the maximum duty cycle error of the output clock can be less than 1.9% with the input duty-cycle ranging from 20% to 80 %, and the input frequency ranging from 450 MHz to 1 GHz. The power consumption of the proposed ADDCC is 1.7mW at 450MHz and 3.45mW at 1 GHz with a 1.0V power supply.
  • Keywords
    CMOS integrated circuits; UHF integrated circuits; circuit simulation; delay lines; integrated circuit design; low-power electronics; ADDCC; CMOS process; FS process corner; PVT; SF process corner; clock distortion; delay line; frequency 450 MHz to 1 GHz; input clock period; low-power delay-recycled all-digital duty-cycle corrector; power 1.7 mW; power 3.45 mW; power consumption; process-voltage-temperature variation; size 90 nm; unbalanced process variation tolerance; voltage 1.0 V; Clocks; Computer architecture; Delay lines; Delays; Power demand; System-on-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-4435-7
  • Type

    conf

  • DOI
    10.1109/VLDI-DAT.2013.6533869
  • Filename
    6533869