DocumentCode :
609693
Title :
A fast-locking wide-range all-digital delay-locked loop with a starting SAR-bit prediction mechanism
Author :
Chia-Yu Yao ; Yung-Hsiang Ho
Author_Institution :
Dept. of Electr. Eng., NTUST, Taipei, Taiwan
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents an 11-bit all-digital delay-locked loop (ADDLL) with a starting SAR-bit prediction (SSARBP) mechanism. The proposed circuit possesses a wide-operating range such that it can serve as a de-skew buffer for the clock signal. With the proposed SSARBP mechanism, the ADDLL can achieve fast lock and can eliminate the harmonic lock. In the beginning of a SSARBP cycle, the circuit estimates the current delay of the digital-controlled delay line (DCDL). We then predict a suitable SAR starting bit to shorten the lock time. The ADDLL chip is designed using TSMC´s 0.18 μm CMOS cell library. The post-simulation results show that the proposed circuit can operate from 66 MHz to 1 GHz. In the low frequency band, the lock time is within 17-23 clock cycles. In the high frequency band, the lock time is within 17-32 clock cycles. The power consumption of the chip is estimated to be 22 mW at 1.8-V supply voltage and 1-GHz clock frequency.
Keywords :
CMOS digital integrated circuits; delay lines; delay lock loops; ADDLL chip; DCDL; SSARBP cycle; SSARBP mechanism; TSMC CMOS cell library; clock signal; current delay; de-skew buffer; digital-controlled delay line; fast-locking wide-range all-digital delay-locked loop; frequency 66 MHz to 1 GHz; harmonic lock elimination; power 22 mW; power consumption; size 0.18 mum; starting SAR-bit prediction mechanism; voltage 1.8 V; CMOS integrated circuits; Clocks; Delay lines; Delays; Harmonic analysis; Solid state circuits; Time-frequency analysis; all-digital delay-locked loop (ADDLL); starting SAR-bit prediction; successive approximation register (SAR);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-4435-7
Type :
conf
DOI :
10.1109/VLDI-DAT.2013.6533870
Filename :
6533870
Link To Document :
بازگشت