Title :
A novel on-chip current-sensing structure for current-mode DC-DC converter
Author :
Hongyi Wang ; Xi Hu ; Quanfeng Liu ; Gangdong Zhao ; Dongzhe Luo
Author_Institution :
Dept. of Electron. & Inf. Eng., Univ. of Xi´an Jiaotong, Xi´an, China
Abstract :
A novel current-sensing structure for current-mode DC-DC converter is presented in this paper. It has significant improvements on current-sensing speed and reducing the sensitivity to the variations of the process, voltage, temperature and loading (PVTL), which is derived in detail. It has been used in a current-mode DC-DC converter fabricated by CSMC 0.5μm CMOS process with a die size of 2.25 mm2. Experimental results show that with the current-sensing circuit the converter can operate at the supply voltage range of 2.7 to 5.5V with loading 0-600mA and has the ability to convert from 5.5V down to 0.6V at 4MHz. The measured transient response time is 7μs as the load current changes between 0 and 600mA rapidly. Moreover, the current-sensing structure can be also used in other integrated circuits for loop control and over-current protection.
Keywords :
CMOS integrated circuits; DC-DC power convertors; current-mode circuits; electric sensing devices; CSMC CMOS process; current 0 mA to 600 mA; current-mode DC-DC converter; current-sensing circuit; current-sensing structure; frequency 4 MHz; integrated circuits; loop control; on-chip current-sensing structure; overcurrent protection; process-voltage-temperature and loading; size 0.5 mum; time 7 mus; voltage 2.7 V to 5.5 V; DC-DC power converters; Inductors; Power transistors; Sensors; Switching circuits; Transistors; Voltage measurement; Compensation ramp; Current-mode control; DC-DC converter; High-speed current-sensing; PVTL;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-4435-7
DOI :
10.1109/VLDI-DAT.2013.6533871
