DocumentCode :
609696
Title :
A wideband programmable-gain amplifier for 60GHz applications in 65nm CMOS
Author :
Yi-Keng Hsieh ; Hsieh-Hung Hsieh ; Liang-Hung Lu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, a novel circuit topology of programmable-gain amplifier (PGA) is presented for 60GHz applications. To attain wideband characteristics, a modified Cherry-Hooper amplifier is employed as the gain cell while series binary-weighted resistor networks are adopted in both the feedback path and the source degeneration. As a result, a pseudo-exponential approximation is performed, leading to programmable linear-in-dB gain-tuning operations. By cascading four gain cells along with a dc offset cancellation circuit and an output buffer stage, a 3-bit digital-controlled wideband PGA is implemented. Fabricated in a 65nm CMOS process, the proposed PGA exhibits a 3dB bandwidth more than 1.92 GHz and a dB-linear gain range from -9.6 to 34.5 dB with a maximum gain error of ±0.54 LSB. The core circuit consumes a dc power of 4.9 mW from a 1-V supply voltage while the chip occupies a small active area of 0.03 mm2.
Keywords :
CMOS analogue integrated circuits; approximation theory; circuit feedback; field effect MIMIC; millimetre wave amplifiers; programmable circuits; resistors; wideband amplifiers; CMOS process; LSB; PGA circuit topology; dc offset cancellation circuit; digital-controlled wideband PGA; feedback path; frequency 60 GHz; gain -9.6 dB to 34.5 dB; gain cell; modified Cherry-Hooper amplifier; power 4.9 mW; programmable linear-in-dB gain-tuning operations; pseudo-exponential approximation; series binary-weighted resistor networks; size 65 nm; source degeneration; voltage 1 V; wideband programmable-gain amplifier; word length 3 bit; CMOS integrated circuits; Electronics packaging; Gain; Radio frequency; Resistors; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-4435-7
Type :
conf
DOI :
10.1109/VLDI-DAT.2013.6533873
Filename :
6533873
Link To Document :
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