DocumentCode :
609785
Title :
Effects of bonding pressure on quality of SLID interconnects
Author :
Panchenko, Iuliana ; Grafe, Juergen ; Mueller, Maik ; Wolter, Klaus-Juergen
Author_Institution :
TU Dresden, Electronics Packaging Laboratory, 01062 Dresden, Germany
fYear :
2012
fDate :
17-20 Sept. 2012
Firstpage :
1
Lastpage :
7
Abstract :
The investigation of the bonding pressure change on the different quality aspects of the solid-liquid interdiffusion (SLID) interconnects is presented. The stacks were produced by a flux-assisted bonding of two Si dies with an area array of square Cu/SnAg bumps on the bottom die and Cu bumps on the top die at approx. 250 °C. The bonding pressure was varied between 0 MPa, 0.35 MPa, 0.69 MPa, 1.04 MPa, 1.38 MPa, 1.73 MPa, 2.08 MPa, 2.42 MPa. Cross-sections of the stacks were analyzed by optical microscopy and scanning electron microscopy (SEM). Tilt, standoff height (SOH) variation, void fraction, interlayer thickness and Cu3Sn thickness were measured. It will be shown that increase of the bonding pressure can reduce the void fraction from 35.1 % (0 MPa) to 10.7 % (2.42 MPa) and decrease the interlayer thickness at the same time. Decrease of the interlayer thickness is accompanied by solder squeeze and increase of Cu3Sn thickness. Shear tests revealed an average shear strength of (81.3 ± 21.5) MPa for the produced samples. The analysis of the fracture surfaces with SEM revealed that the weakest interface is located between Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) close to the initial Cu bump.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System-Integration Technology Conference (ESTC), 2012 4th
Conference_Location :
Amsterdam, Netherlands
Print_ISBN :
978-1-4673-4645-0
Type :
conf
DOI :
10.1109/ESTC.2012.6542097
Filename :
6542097
Link To Document :
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