Title :
PECVD of GexS1−x films for nano-ionic redox conductive bridge memristive switch memory
Author :
Latif, Muhammad Rizwan ; Mitkova, M. ; Tompa, G. ; Coleman, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA
Abstract :
This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.
Keywords :
Ge-Si alloys; chemical vapour deposition; memristors; random-access storage; silver; sprockets; sputtering; Ag; ChG film deposition; GexS1-x; PECVD; RCBM; chalcogenide glass; deposition process; electrical characteristics; growth kinetics; nanoionic redox conductive bridge memristive switch memory; optimal deposition condition; plasma enhanced chemical vapor deposition; redox conductive bridge memristor; silver; sputtering; thermal evaporation; Bridge circuits; Electrodes; Films; Glass; Performance evaluation; Surface treatment; Redox conductive bridge memristors; chalcogenide glass; film and device characterization; silver; solid electrolyte;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2013 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-6034-0
DOI :
10.1109/WMED.2013.6544504
