Title :
Thermal processing impact on the integrity of HfO2-based high-k gate dielectrics
Author :
Xuefeng Lin ; Morinville, W. ; Zhiyong Suo ; Zhuang, K. ; Krasinski, C. ; Markowitz, D. ; Noehring, K. ; Yang Zhou ; York, S. ; Yapa, H. ; Brown, Jason ; Shifeng Lu
Author_Institution :
Surface Anal. Lab. at Fab 4, Micron Technol., Inc., Boise, ID, USA
Abstract :
Comprehensive studies of the integrity of HfO2-based high-k gate dielectrics are critical for optimizing and determining their performance properties. We present our results of atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy, mercury probe, secondary ion mass spectrometry, and X-ray diffraction investigations of the HfO2 gate stack integrity thermally processed with low and high temperatures, and the arising issues on interfacial reaction, diffusion, crystal phase, surface structures, impurities, and dielectric behaviors are addressed and discussed. The aim of the present study is to gain a better understanding of these physical, chemical, and structural characteristics of high-k oxide gate dielectric stacks on silicon under elevated temperature annealing.
Keywords :
atomic force microscopy; diffusion; hafnium compounds; high-k dielectric thin films; surface structure; thermal management (packaging); X-ray diffraction investigations; angle-resolved X-ray photoelectron spectroscopy; atomic force microscopy; crystal phase; dielectric behaviors; diffusion; elevated temperature annealing; gate stack integrity; high-k gate dielectrics; high-k oxide gate dielectric stacks; impurity; interfacial reaction; mercury probe; performance property; secondary ion mass spectrometry; surface structures; thermal processing impact; Annealing; Dielectrics; Hafnium compounds; Logic gates; Silicon; Surface topography; angle-resolved x-ray photoelectron spectroscopy; atomic force microscopy; contaminations; diffusion; high-k gate dielectrics; interfacial reactions; leakage current; mercury probe; secondary ion mass spectrometry; thermal stability; x-ray diffraction;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2013 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-6034-0
DOI :
10.1109/WMED.2013.6544505