Title :
Dry Etched Waveguide Laser Diode on GeOI
Author :
Shuh-Ying Lee ; Kian Hua Tan ; Wan Khai Loke ; Wicaksono, S. ; Daosheng Li ; Harper, Robert ; Soon-Fatt Yoon
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We demonstrate a top-top contact, dry etched mirror facet III-V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 × InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integration of III-V electronic and photonic devices with silicon and SiO2. Lasing occurred at ~ 985 nm with a threshold current density of ~ 2 kA/cm2. Pulsed measurements, and SEM and TEM characterization methods were used. The issue of heat transfer limited the performance of the laser.
Keywords :
III-V semiconductors; current density; elemental semiconductors; gallium arsenide; germanium; heat transfer; indium compounds; integrated optics; quantum well lasers; scanning electron microscopy; semiconductor-insulator boundaries; silicon; silicon compounds; transmission electron microscopy; waveguide lasers; Ge; III-V electronic devices; InGaAs-GaAs; SEM; Si; SiO2; TEM; dry etched mirror facet III-V waveguide laser diode; germanium-on-insulator; heat transfer; lattice matched buffer; monolithic integration; photonic devices; quantum well; threshold current density; top-top contact; wavelength 985 nm; Gallium arsenide; Photonics; Semiconductor lasers; Silicon; Substrates; Waveguide lasers; Semiconductor growth; optical device fabrication; quantum well lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2015.2432022
