Title :
High temperature AlGaN/GaN HFET microwave characterization and modeling
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. S-parameters were on-wafer measured in frequency range up to 40 GHz in wide bias point settings as well as microwave parameters fT and fmax were measured and visualized in the temperature range from room temperature up to 425°C. Significant influence of temperature on microwave properties was observed.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT devices; S-parameters; high temperature on-wafer microwave characterization setup; wide bias point settings; Aluminum gallium nitride; Gallium nitride; HEMTs; Microwave circuits; Microwave devices; Microwave measurement; Temperature measurement; AlGaN/GaN; HEMT; S-parameters; high temperature;
Conference_Titel :
Microwave Techniques (COMITE), 2013l Conference on
Conference_Location :
Pardubice
Print_ISBN :
978-1-4673-5512-4
DOI :
10.1109/COMITE.2013.6545055
