Microscopic model for the kinetics of the reset process in HfO2 RRAM

Author

Kalantarian, A. ; Bersuker, Gennadi ; Butcher, B. ; Gilmer, D.C. ; Privitera, S. ; Lombardo, Salvatore ; Geer, R. ; Nishi, Yoshio ; Kirsch, P. ; Jammy, R.

Author_Institution

SEMATECH, Albany, NY, USA

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

A detailed model for the reset process kinetics in HfO₂-based RRAM is presented describing the transition between low and high resistance states at the atomic level. Based on the filament characteristics as observed by TEM, the kinetics of the reset operation is simulated using the Time Dependent Monte Carlo (TDMC) method incorporating ab-initio calculated microscopic characteristics of the oxygen ions in hafnia. Temperature and field driven oxygen diffusion in the oxide surrounding the filament is shown to provide the needed supply of oxygen to re-oxidize the tip of the filament and switch the device to the High Resistance State (HRS).

Keywords

Monte Carlo methods; hafnium compounds; oxygen; random-access storage; transmission electron microscopy; HfO₂; RRAM; TDMC; TEM; atomic level; high resistance state; microscopic model; oxygen diffusion; reset process kinetics; resistive random access memory; time dependent Monte Carlo method; transmission electron microscopy; Electric fields; Hafnium compounds; Ions; Kinetic theory; Mathematical model; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545582

Filename

6545582