DocumentCode :
610570
Title :
Good memory performance and coexistence of bipolar and unipolar resistive switching for CMOS compatible Ti/HfOx/W memory
Author :
Kan-Hsueh Tsai ; Pang-Shiu Chen ; Tai-Yuan Wu ; Yu-Sheng Chen ; Heng-Yuan Lee ; Wei-Su Chen ; Chen-Han Tsai ; Pei-Yi Gu ; Rahaman, S.Z. ; Yu-De Lin ; Chen, Fan ; Ming-Jinn Tsai ; Tzu-Kun Ku
Author_Institution :
Electron. & Optoelectron. Res. Lab., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
The HfOx device with CMOS compatible W BE is successfully demonstrated. The devices exhibit the low VFORM and good switching performance. The coexistence of bipolar and unipolar switching for the Ti/HfOx/W device is presented. The current reduction of bipolar and unipolar operation is by the decrease of compliance current and cell size, respectively.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; hafnium compounds; semiconductor storage; switching circuits; titanium; tungsten; CMOS compatible; bipolar resistive switching; coexistence; good memory performance; unipolar resistive switching; CMOS integrated circuits; Electrodes; Hafnium oxide; Resistance; Switches; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545584
Filename :
6545584
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=610570
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