Title :
Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure
Author :
Jana, D. ; Maikap, S. ; Prakash, Aravind ; Lee, H.Y. ; Chen, W.S. ; Chen, F.T. ; Kao, Min-Chi ; Tsai, Mavis
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ. (CGU), Taoyuan, Taiwan
Abstract :
Promising resistive switching memory characteristics in a IrOx/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >104 cycles, and excellent data retention of >104 s at 85°C.
Keywords :
gadolinium compounds; iridium compounds; low-power electronics; random-access storage; rough surfaces; surface roughness; tungsten; IrOx-GdOx-W; bottom electrode; current 20 muA; data retention; electric field; formation-free resistive switching memory; low power resistive switching memory; memory device; power 60 muW; program-erase endurance; repeatable switching cycles; surface roughness; temperature 85 degC; Electric fields; Electrodes; Materials; Resistance; Rough surfaces; Surface roughness; Switches;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545585
