• DocumentCode
    610572
  • Title

    Scalability issue in Ti/HfO bipolar resistive memory with 1T-1R configuration by resistance pinning effect during 1st RESET and its solution

  • Author

    Lee, H.Y. ; Chen, Patrick S. ; Chen, Y.S. ; Tsai, C.H. ; Gu, P.Y. ; Wu, T.Y. ; Tsai, K.H. ; Rahaman, S.Z. ; Lin, Y.T. ; Chen, W.S. ; Chen, F.T. ; Tsai, Mavis ; Ku, T.K.

  • Author_Institution
    Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The scalability issue of 1T-1R Ti/HfOx BRM, which is resulted from the interaction between BRM and transistor, is demonstrated. While a sufficiently lower Vforming can mitigate the RP, an alternative buffer layer Ta is also proposed to further scale the 1T-1R HfOx based BRM.
  • Keywords
    buffer layers; hafnium compounds; high-k dielectric thin films; storage management chips; tantalum; titanium; 1T-1R configuration; BRM; Ta; Ti-HfO; bipolar resistive memory; buffer layer; resistance pinning effect; transistor; Hafnium oxide; Nonvolatile memory; Resistance; Scalability; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545586
  • Filename
    6545586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610572