DocumentCode :
610573
Title :
Improvement of switching uniformity and scalability in 1T-1R HfOx-based bipolar resistive memory with Zr inserting layer
Author :
Wu, T.Y. ; Chen, W.S. ; Chen, Y.S. ; Chen, Patrick S. ; Lee, H.Y. ; Tsai, K.H. ; Tsai, C.H. ; Gu, P.Y. ; Rahaman, S.Z. ; Lin, Y.T. ; Chen, F.T. ; Tsai, M.J. ; Ku, T.K.
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
1T-1R Zr/HfOx RRAM with improved uniformity is proposed, which is due to the easily Oxidation of Zr layer from both HfOx and supporting SiO2. The formation of ZrOx become a good current limiter which help the device prevent scalability issue.
Keywords :
hafnium compounds; oxidation; random-access storage; zirconium; 1T-1R Zr/HfOx RRAM; HfOx; Zr; Zr inserting layer; bipolar resistive memory; current limiter; oxidation; switching uniformity; Electrodes; Hafnium oxide; Oxidation; Resistance; Switches; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545587
Filename :
6545587
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=610573
بازگشت