Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors

Author

Chen-Ming Lee ; Bing-Yue Tsui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.

Keywords

elemental semiconductors; flash memories; grain boundaries; nanowires; silicon; thin film transistors; three-dimensional integrated circuits; 3D IC; 3D stacked flash memories; GBIF model; Si; amonia plasma treatment; grain boundary traps; grain-boundary-induced-fluctuation; nanoscale poly-Si nanowire thin-film transistors; nanoscale poly-Si thin-film transistor; random telegraph signal noise; three-dimensional integrated circuits; Fluctuations; Grain boundaries; Logic gates; Nanoscale devices; Noise; Plasma temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545598

Filename

6545598