Title :
Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors
Author :
Chen-Ming Lee ; Bing-Yue Tsui
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.
Keywords :
elemental semiconductors; flash memories; grain boundaries; nanowires; silicon; thin film transistors; three-dimensional integrated circuits; 3D IC; 3D stacked flash memories; GBIF model; Si; amonia plasma treatment; grain boundary traps; grain-boundary-induced-fluctuation; nanoscale poly-Si nanowire thin-film transistors; nanoscale poly-Si thin-film transistor; random telegraph signal noise; three-dimensional integrated circuits; Fluctuations; Grain boundaries; Logic gates; Nanoscale devices; Noise; Plasma temperature; Thin film transistors;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545598
