Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

In this paper, the impacts of cycle-to-cycle variation (CCV) effects on the predictions of NBTI degradation and the resulted dynamic variations are studied in highly-scaled high-κ pFETs. By adopting the statistical trap-response (STR) technique, the 2-D distributions and the correlations of key parameters in compact NBTI models due to both device-to-device variation (DDV) and cycle-to-cycle variation (CCV) are extracted. Large error can be found if not considering the CCV effects in predicting the NBTI degradations and resulted time-dependent variations. Different compact NBTI models are also compared for accurate reliability-variability predictions in nanoscale device and circuit design.