Title :
The design optimization and variation study of segmented-channel MOSFET using HfO2 or SiO2 trench isolation
Author :
Hyohyun Nam ; Changhwan Shin
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Seoul, Seoul, South Korea
Abstract :
Recently, as another pathway of the bulk CMOS scaling, the segmented-channel MOSFET on corrugated substrate was demonstrated. In order to additionally improve its performance, the high-k material (HfO2) in-between the channel stripes of the corrugated substrate as well as in the shallow trench isolation region is used. In this work, the variation-aware design optimization of the SegFET for the LSTP specification is first performed, and then performance, power, variation analysis is followed. The VSTI filled with HfO2 (vs. SiO2) in the corrugated substrate and the STI filled with conventional material (SiO2) demonstrates the best performance, the lowest power consumption, and the least variation in the SegFET.
Keywords :
CMOS integrated circuits; MOSFET; circuit optimisation; hafnium compounds; high-k dielectric thin films; silicon compounds; HfO2; LSTP specification; SegFET; SiO2; VSTI; bulk CMOS scaling; corrugated substrate; high-k material; power consumption; segmented-channel MOSFET; shallow trench isolation region; variation-aware design optimization; very shallow trench isolation;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545600
