Title :
The series resistance component of hot carrier degradation in ultra-short channel devices
Author :
Campbell, J.P. ; Cheung, K.P. ; Oates, Anthony S.
Author_Institution :
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
Abstract :
Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.
Keywords :
defect states; hot carriers; power semiconductor devices; threshold elements; defect generation-based parametric shifts; hot carrier degradation; power device geometries; series resistance component; threshold voltage/transconductance; ultrashort channel devices; Degradation; Electrical resistance measurement; Geometry; Resistance; Stress; Stress measurement; Temperature measurement;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545601
