Title :
Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates
Author :
Matsukawa, T. ; Liu, Y.X. ; Endo, Kazuhiro ; Mizubayashi, W. ; Tsukada, J. ; Ishikawa, Yozo ; Yamauchi, Hiroyuki ; O´uchi, S. ; Ota, Hiroyuki ; Migita, S. ; Morita, Yusuke ; Masahara, M.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (Vt) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.
Keywords :
MOSFET; amorphous semiconductors; silicon compounds; tantalum compounds; work function; COV fluctuation; MG FinFET; TaSiN; WF uniformity; amorphous MG; current-onset voltage; metal gates; polycrystalline MG; polygrains; suppressed variability; threshold voltage; work function uniformity; Correlation; FinFETs; Fluctuations; Logic gates; Resource description framework; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545606
