Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Author

Szu-Hung Chen ; Min-Cheng Chen ; Hung-Min Chen ; Chuan-Feng Shih ; Shih-Hsiung Wu ; Yi-Ying Ho ; Yu-Sheng Lai ; Shou-Ji Chen ; Liu, Kun ; Bo-Yuan Chen ; Dong-Yen Lai ; Chang-Hsien Lin ; Chia-Yi Lin ; Fu-Kuo Hsueh ; Chi-Ming Wu ; Cho-Lun Hsu ; Wen-Cheng Ch

Author_Institution

Nat. Nano Device Labs. (NDL), Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.

Keywords

CMOS integrated circuits; Schottky barriers; nickel compounds; rectification; semiconductor junctions; silicon compounds; ytterbium; CMOS application; MOSFET performance; Schottky barrier free junction technology; Yb:NiSi-Si; electron; energy barrier engineering; negative Schottky barrier height; sheet resistance; unity rectification ratio; Junctions; Nickel alloys; Resistance; Schottky barriers; Silicides; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545608

Filename

6545608