DocumentCode
610595
Title
Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
Author
Kong, Eugene ; Xiao Gong ; Pengfei Guo ; Bin Liu ; Yee-Chia Yeo
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
fYear
2013
fDate
22-24 April 2013
Firstpage
1
Lastpage
2
Abstract
A novel technique for doping the source/drain or source/drain extension regions of InGaAs MOSFETs was developed based on silane treatment and laser anneal. This doping technique has the potential to provide conformal, ultra-shallow, and very abrupt n++ junctions while being free from implant damage, and is first demonstrated in planar InGaAs MOSFETs.
Keywords
MOSFET; laser beam annealing; semiconductor doping; semiconductor junctions; InGaAs; abrupt ultrashallow junction formation; laser annealling; n-MOSFET; planar MOSFET; silane treatment; source-drain doping technique; source-drain extension regions; Annealing; Doping; Indium gallium arsenide; Junctions; MOSFET; Semiconductor lasers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4673-3081-7
Electronic_ISBN
978-1-4673-6422-5
Type
conf
DOI
10.1109/VLSI-TSA.2013.6545609
Filename
6545609
Link To Document