• DocumentCode
    610596
  • Title

    Sub-10nm junction in InGaAs with sulfur mono-layer doping

  • Author

    Loh, W.-Y. ; Wang, W.-E. ; Hill, R.J.W. ; Barnett, Julie ; Yum, J.H. ; Lysagth, P. ; Price, Jack ; Hung, P.Y. ; Kirsch, P.D. ; Jammy, R.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A conformal, chemical-based sulfur monolayer doping process (thereafter S-MLD) on InxGa1-xAs (x = 0.53) material is reported. Ultra-shallow junction (xj <; 10 nm) and low sheet resistance Rs <; 200 Ω/ is demonstrated with bulk activation > 80% at sulfur concentration of >1019/cm3.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; monolayers; semiconductor doping; semiconductor junctions; InxGa1-xAs; InGaAs junction; S-MLD; chemical-based sulfur monolayer; conformal sulfur monolayer; sheet resistance; sulfur monolayer doping; ultrashallow junction; Annealing; Doping; Hafnium; Indium gallium arsenide; Junctions; Resistance; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545610
  • Filename
    6545610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610596