DocumentCode :
610596
Title :
Sub-10nm junction in InGaAs with sulfur mono-layer doping
Author :
Loh, W.-Y. ; Wang, W.-E. ; Hill, R.J.W. ; Barnett, Julie ; Yum, J.H. ; Lysagth, P. ; Price, Jack ; Hung, P.Y. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
A conformal, chemical-based sulfur monolayer doping process (thereafter S-MLD) on InxGa1-xAs (x = 0.53) material is reported. Ultra-shallow junction (xj <; 10 nm) and low sheet resistance Rs <; 200 Ω/ is demonstrated with bulk activation > 80% at sulfur concentration of >1019/cm3.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; monolayers; semiconductor doping; semiconductor junctions; InxGa1-xAs; InGaAs junction; S-MLD; chemical-based sulfur monolayer; conformal sulfur monolayer; sheet resistance; sulfur monolayer doping; ultrashallow junction; Annealing; Doping; Hafnium; Indium gallium arsenide; Junctions; Resistance; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545610
Filename :
6545610
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=610596
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