Title :
Device scalability and electrical properties of ALD HfZrO2 with optimum plasma nitridation technique: A study of depth profiles by maximum entropy finite element model and gate stack sub-band gap extraction
Author :
Chiang, C.K. ; Chang, J.C. ; Lin, G.P. ; Chin, Y.L. ; Chen, W.J. ; Yang, Cary Y. ; Wei, C.H. ; Chan, Mei-Lin ; Yang, C.L. ; Wu, J.Y.
Author_Institution :
United Microelectron. Corp., Hsinchu, Taiwan
Abstract :
In this work, we compared the decouple plasma nitridation (DPN) and post nitridation anneal (PNA) processes for equivalent oxide thickness (EOT) scaling of ALD hafnium zirconate (HfZrO2) gate dielectric. Detailed physical, optical and MOSCAP electrical characteristics of HfZrON film were studied. It is found that DPN power parameter tuning could yield a more densified HfZrO2/SiO2 gate stack as compared to DPN pressure and PNA temperature process capability. Higher PNA temperature will cause the nitrogen tail diffuses throughout the HfZrO2/SiO2 gate stack and moves into the SiO2/Si substrate interface, more defects are shown in the SiO2/Si interfacial sub-band gap.
Keywords :
MOS capacitors; annealing; diffusion; electrical conductivity; energy gap; finite element analysis; hafnium compounds; high-k dielectric thin films; maximum entropy methods; nitridation; plasma materials processing; silicon compounds; ALD; DPN power parameter tuning; DPN pressure; EOT scaling; HfZrO2-SiO2-Si; MOSCAP electrical characteristics; PNA processes; PNA temperature process capability; decouple plasma nitridation; depth profiles; device scalability; electrical properties; equivalent oxide thickness scaling; gate dielectric; gate stack subband gap extraction; interfacial subband gap; maximum entropy finite element model; nitrogen tail; optical characteristics; optimum plasma nitridation technique; physical characteristics; post nitridation anneal processes; substrate interface; High K dielectric materials; Logic gates; Nitrogen; Plasma temperature; Silicon; Temperature measurement;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545612
