DocumentCode :
610601
Title :
Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation
Author :
Pengfei Guo ; Chunlei Zhan ; Yue Yang ; Xiao Gong ; Bin Liu ; Ran Cheng ; Wei Wang ; Jisheng Pan ; Zheng Zhang ; Eng Soon Tok ; Genquan Han ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
Germanium-tin (GeSn) n-channel MOSFETs with low temperature (370 °C) Si surface passivation were demonstrated for the first time. With Si passivation, a higher drive current is achieved for Ge0.976Sn0.024 nMOSFETs as compared to devices with GeSnO2 passivation. In addition, the effect of forming gas anneal (FGA) was investigated. FGA improves the gate dielectric interface quality, leading to improvement of subthreshold swing S.
Keywords :
MOSFET; annealing; germanium compounds; passivation; silicon; FGA; GeSnO2; forming gas anneal; gate dielectric interface quality; low temperature silicon surface passivation; n-channel MOSFET; subthreshold swing; temperature 370 degC; Dielectrics; Fabrication; Films; Logic gates; MOSFET; Passivation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545615
Filename :
6545615
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=610601
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