Title :
Study of TSV filling performance with wide-range pattern densities by using a novel plating chamber with surface paddle agitation
Author :
Shang-Chun Chen ; Yiu-Hsiang Chang ; Yu-Chen Hsin ; Chien-Chou Chen ; Jui-Chin Chen ; Po-Chih Chang ; Pei-Jer Tzeng ; Sue-Chen Liao ; Shin-Chiang Chen ; Chung-Chih Wang ; Tzu-Chien Hsu ; Yu-Ming Lin ; Erh-Hao Chen ; Cha-Hsin Lin ; Tzu-Kun Ku
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
TSV (through silicon via) metallization is one key process in 3DIC integration. Due to high aspect ratio and filling volume, TSV copper plating is the most time-consuming module in the whole process flow. To increase the throughput of electroplating, tool configurations and plating chemistry should be optimized. In this work, an electroplating chamber with a novel paddle design is used in this experiment to study the effects of paddle agitation on plating performance. The influence of this paddle design on different TSV pattern density and geometric scheme are also investigated.
Keywords :
copper; electroplating; three-dimensional integrated circuits; 3DIC; Cu; TSV metallization; electroplating chamber; plating chemistry; surface paddle agitation; three-dimensional integrated circuits; through-silicon-via; Chemicals; Copper; Filling; Metallization; Surface treatment; Through-silicon vias;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545618
