Study of TSV filling performance with wide-range pattern densities by using a novel plating chamber with surface paddle agitation

Author

Shang-Chun Chen ; Yiu-Hsiang Chang ; Yu-Chen Hsin ; Chien-Chou Chen ; Jui-Chin Chen ; Po-Chih Chang ; Pei-Jer Tzeng ; Sue-Chen Liao ; Shin-Chiang Chen ; Chung-Chih Wang ; Tzu-Chien Hsu ; Yu-Ming Lin ; Erh-Hao Chen ; Cha-Hsin Lin ; Tzu-Kun Ku

Author_Institution

Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

TSV (through silicon via) metallization is one key process in 3DIC integration. Due to high aspect ratio and filling volume, TSV copper plating is the most time-consuming module in the whole process flow. To increase the throughput of electroplating, tool configurations and plating chemistry should be optimized. In this work, an electroplating chamber with a novel paddle design is used in this experiment to study the effects of paddle agitation on plating performance. The influence of this paddle design on different TSV pattern density and geometric scheme are also investigated.

Keywords

copper; electroplating; three-dimensional integrated circuits; 3DIC; Cu; TSV metallization; electroplating chamber; plating chemistry; surface paddle agitation; three-dimensional integrated circuits; through-silicon-via; Chemicals; Copper; Filling; Metallization; Surface treatment; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545618

Filename

6545618