Title :
Co-sputtered Cu/Ti bonded interconnects for 3D integration applications
Author :
Hsiao-Yu Chen ; Sheng-Yao Hsu ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.
Keywords :
copper alloys; electromigration; integrated circuit bonding; integrated circuit interconnections; sputtering; three-dimensional integrated circuits; titanium alloys; 3D integration applications; Cu-Ti; cosputtered bonded interconnect; high electrical stability; self-formed adhesion layer; Adhesives; Annealing; Metals; Substrates; Three-dimensional displays; 3D integration; co-sputtered metal bonding; self-formed adhesion layer;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545619
