• DocumentCode
    610613
  • Title

    SoC level considerations of 3D technology architecture

  • Author

    Kengeri, S. ; Banna, S. ; Halliyal, A.

  • Author_Institution
    Globalfoundries, Sunnyvale, CA, USA
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper summarizes circuit and 3D device interactions on System-on-Chip (SoC) architectures. The electrostatics of 3D devices is shown to depend on fin structural parameters such as fin width, height and taper. The nature of the current flow in 3D devices, careful design of Source/Drain region volume, contact shape and proximity to channel are critical to achieve optimum device performance. Key device structural features, their impact on electrostatics and drive current along with critical pitches and their impact on SoC level metrics are discussed.
  • Keywords
    MOS integrated circuits; electrostatics; system-on-chip; three-dimensional integrated circuits; 3D device interaction; 3D devices electrostatics; 3D technology architecture; SoC level consideration; current flow; fin height; fin structural parameter; fin taper; fin width; system-on-chip architecture; Computer architecture; FinFETs; Microprocessors; Performance evaluation; Resistance; System-on-chip; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545627
  • Filename
    6545627