• DocumentCode
    610614
  • Title

    3D transistors

  • Author

    Colinge, J.-P.

  • Author_Institution
    TCAD Div., TSMC, Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    After having been considered “exotic devices”, multigate 3D transistor such as FinFETs, trigate FETs or Gate-all-Around nanowire FETs have become an industrial reality. The excellent electrostatic control of the channel region by the multigate architecture allows one to reduce short-channel effects well below the 20nm node and have the potential to extend Moore´s law down to a gate length of 3nm.
  • Keywords
    MOSFET; nanowires; FinFET; Moore law; channel region; electrostatic control; exotic devices; gate-all-around nanowire FET; multigate 3D transistor; multigate architecture; short channel effects; size 3 nm; trigate FET; Electrostatics; Logic gates; MOSFET; Nanoscale devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545628
  • Filename
    6545628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610614