DocumentCode :
610616
Title :
High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering
Author :
Suoming Zhang ; Yu Tian ; Dedong Han ; Dongfang Shan ; Fuqing Huang ; Shuyang Wang ; Xing Zhang ; Shengdong Zhang ; Yi Wang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
We report on the fabrication of fully transparent Ga-doped ZnO TFTs on glass. The device shows excellent performance which on-off ratio, Vt, SS, field effect mobility is 4×109, 3.2v, 235mV/decade, 370cm2/v·s, respectively. The performance is significantly improved by annealing treatment, with much steeper SS of 107mV/decade and much lower Vt of 0.7v.
Keywords :
annealing; sputtering; thin film transistors; zinc compounds; RF magnetron sputtering; TFT; ZnO; annealing; field effect mobility; Annealing; Films; Glass; Radio frequency; Thin film transistors; X-ray scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545630
Filename :
6545630
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=610616
بازگشت