Title :
Source/drain series resistance induced feedback effect on drain current mismatch and its implication
Author :
Kuo, J.J.-Y. ; Ming-Long Fan ; Wei Lee ; Pin Su
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We have reported and modeled a new source/drain series resistance induced feedback effect on the drain current mismatch of aggressively scaled MOSFETs. This feedback effect needs to be considered when one-to-one comparisons between Si and high-mobility channel (e.g., Ge) devices regarding intrinsic drain current variability are made.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; germanium; Ge; MOSFET; drain current mismatch; feedback effect; high-mobility channel device; intrinsic drain current variability; source-drain series resistance; Data models; FinFETs; Logic gates; Resistance; Semiconductor device modeling; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545637
