A perspective on future nanoelectronic devices

Author

Ning, Tak H.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

One clear direction for the development of future nanoelectronic devices is low power and high performance at low operating voltage. The fact that CMOS has a subthreshold region and a linear region, and that CMOS circuits operate at V_dd a few times V_t suggest that it is a challenge to reduce CMOS voltage towards 0.5 V. However, there is evidence that SOI lateral bipolar could be a low-power and high-performance technology. SOI lateral bipolar devices using small-gap semiconductors offer a clear path for high performance and low power bipolar circuits at about 0.5 V.

Keywords

CMOS integrated circuits; bipolar integrated circuits; low-power electronics; nanoelectronics; silicon-on-insulator; CMOS circuit; CMOS voltage; SOI lateral bipolar; high-performance technology; linear region; low operating voltage; low power bipolar circuit; low-power technology; nanoelectronic device; small-gap semiconductor; subthreshold region; voltage 0.5 V; Bipolar transistors; CMOS integrated circuits; Delays; Performance evaluation; Power dissipation; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545638

Filename

6545638