Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

Author

Mizubayashi, W. ; Fukuda, Kenji ; Mori, Takayoshi ; Endo, Kazuhiro ; Liu, Y.X. ; Matsukawa, T. ; O´uchi, S. ; Ishikawa, Yozo ; Migita, S. ; Morita, Yusuke ; Tanabe, A. ; Tsukada, J. ; Yamauchi, Hiroyuki ; Masahara, M. ; Ota, Hiroyuki

Author_Institution

Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

We analyzed the threshold voltage (V_th) shift due to EOT scaling in double gate (DG) tunnel FinFETs (tFinFETs). It is found that V_th in tFinFETs has high sensitivity of EOT, which is quite different as compared with MOSFETs. We proposed a simple model which is indispensable to design the tFinFETs structure for the first time. In order to correct the V_th modulation due to EOT scaling in tFinFETs, we studied the back gate effect in independent-DG tFinFETs and revealed that the back bias is effective as is the case in the MOSFETs.

Keywords

MOSFET; dielectric materials; electrostatics; EOT scaling; MOSFET; back gate effects; double gate tunnel FinFET; electrostatics; gate dielectrics; tFinFETs structure; threshold voltage shifts; Data models; Electric potential; FinFETs; Logic gates; Sensitivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545646

Filename

6545646